INCREASING ETCH SELECTIVITY OF CARBON FILMS WITH LOWER ABSORPTION CO-EFFICIENT AND STRESS

摘要

PROBLEM TO BE SOLVED: To provide an ashable hardmask (AHM) with high transparency and high etch selectivity.;SOLUTION: A method for depositing a film includes arranging a substrate in a plasma enhanced chemical vapor deposition chamber. A first ashable hardmask (AHM) layer 10 that is carbon-based is deposited on the substrate. During the deposition of the first AHM layer, doping is performed with at least one dopant selected from a group consisting of silicon, silane, boron, nitrogen, germanium, carbon, ammonia, and carbon dioxide. An atomic percentage of the dopant is greater than or equal to 5% of the first AHM layer.;COPYRIGHT: (C)2013,JPO&INPIT