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INCREASING ETCH SELECTIVITY OF CARBON FILMS WITH LOWER ABSORPTION CO-EFFICIENT AND STRESS
INCREASING ETCH SELECTIVITY OF CARBON FILMS WITH LOWER ABSORPTION CO-EFFICIENT AND STRESS
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机译:较低的吸收系数和应力提高碳膜的刻蚀选择性
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摘要
A method for depositing a film includes arranging a substrate in a plasma enhanced chemical vapor deposition chamber. A first ashable hardmask (AHM) layer that is carbon-based is deposited on the substrate. During the depositing of the first AHM layer, doping is performed with at least one dopant selected from a group consisting of silicon, silane, boron, nitrogen, germanium, carbon, ammonia, and carbon dioxide. An atomic percentage of the at least one dopant is greater than or equal to 5% of the first AHM layer.
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