首页> 外国专利> PHOTOMASK SUBSTRATE, PHOTOMASK, PHOTOMASK SUBSTRATE SET, PHOTOMASK SET, METHOD FOR MANUFACTURING PHOTOMASK AND PATTERN TRANSFER METHOD

PHOTOMASK SUBSTRATE, PHOTOMASK, PHOTOMASK SUBSTRATE SET, PHOTOMASK SET, METHOD FOR MANUFACTURING PHOTOMASK AND PATTERN TRANSFER METHOD

机译:光掩模基质,光掩模,光掩模基质集合,光掩模集合,制造光掩模的方法和图案转移方法

摘要

PURPOSE: A substrate for a photo-mask, the photo-mask, a substrate set for the photo-mask, a photo-mask set, a manufacturing method of the photo-mask, and a pattern transferring method are provided to improve the overlapping precision of patterns when a target is being transferred with a plurality of photo-masks. CONSTITUTION: A substrate for a photo-mask forms transferring patterns(112p) on a main surface. The maximum value of height fluctuation in the pattern region of the main surface, Zmax, is 8.5um or less. Measurement points are set on the basis of a pre-determined distance P, and each height of the measurement points to the reference surface is Z. the difference between the maximum Z and the minimum Z is the Zmax. P is more than or equal to 5mm and is less than or equal to 15mm. A manufacturing method of the photo-mask includes the following: the substrate is prepared; an optical film is formed on the main surface of the substrate; and the optical film is patterned to form the transferring patterns. [Reference numerals] (501) Light source; (502) Light illuminating system
机译:用途:提供用于光掩模的基板,光掩模,用于光掩模的基板组,光掩模组,光掩模的制造方法以及图案转印方法以改善重叠性用多个光掩模转移目标时的图案精度。构成:用于光掩模的基板在主表面上形成转印图案(112p)。主表面的图案区域中的高度波动的最大值Zmax为8.5um或更小。基于预定距离P设置测量点,并且测量点到基准表面的每个高度是Z。最大Z和最小Z之间的差是Zmax。 P大于或等于5mm且小于或等于15mm。光掩模的制造方法包括以下步骤:准备基板;在基板的主表面上形成光学膜。光学膜被图案化以形成转印图案。 [附图标记](501)光源; (502)照明系统

著录项

  • 公开/公告号KR20120116875A

    专利类型

  • 公开/公告日2012-10-23

    原文格式PDF

  • 申请/专利权人 HOYA CORPORATION;

    申请/专利号KR20120037814

  • 发明设计人 TSUCHIYA MASAYOSHI;IKEBE HISAMI;

    申请日2012-04-12

  • 分类号G03F1/60;G03F1/76;

  • 国家 KR

  • 入库时间 2022-08-21 17:08:54

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