首页> 外国专利> SURFACE-HYDROPHOBICIZED FILM, MATERIAL FOR FORMATION OF SURFACE-HYDROPHOBICIZED FILM, WIRING LAYER, SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE

SURFACE-HYDROPHOBICIZED FILM, MATERIAL FOR FORMATION OF SURFACE-HYDROPHOBICIZED FILM, WIRING LAYER, SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE

机译:表面疏水化膜,用于形成表面疏水化膜的材料,布线层,半导体器件以及用于制造半导体器件的过程

摘要

A surface-hydrophobicized film is provided which is in contact with an insulating film, and has a higher hydrophobicity than the insulating film at the time of the contact, and which is in contact, on an opposite side of the surface-hydrophobicized film, with wiring, and contains at least one atom selected from the group consisting of sulfur atoms, phosphorus atoms and nitrogen atoms. Semiconductor devices with wiring layers having a low leakage current, a high EM resistance and a high TDDB resistance can be manufactured by using the film.
机译:提供一种表面疏水化膜,该表面疏水化膜与绝缘膜接触,并且比接触时的绝缘膜具有更高的疏水性,并且在表面疏水化膜的相反侧与膜表面接触。布线,并包含至少一个选自硫原子,磷原子和氮原子的原子。通过使用该膜,可以制造具有漏电流低,EM电阻高,TDDB电阻高的布线层的半导体装置。

著录项

  • 公开/公告号KR101132095B1

    专利类型

  • 公开/公告日2012-04-04

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20097019185

  • 申请日2007-03-15

  • 分类号C01B33/12;H01B17/56;H01L21/31;H01L21/28;

  • 国家 KR

  • 入库时间 2022-08-21 17:08:20

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