SUPER HETERO-JUNCTION SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD WHICH IMPROVES ON-RESISTANCE AND PERFORMANCE CHARACTERISTICS

摘要

PURPOSE: A super hetero-junction semiconductor device and a manufacturing method thereof are provided to regularly control impurity concentration filler by minimizing co-doping between p-filler and n-filler due to inter-diffusion.;CONSTITUTION: A first conductive type silicon semiconductor substrate doped to high concentration is prepared. A first conductive epitaxial layer is formed at the upper side of the first conductive type silicon semiconductor substrate. A plurality of first conductive type fillers is formed by etching the first conductive epitaxial layer as a predetermined distance. A plurality of second conductive type fillers is composed of a SiGe single epitaxial layer having a single composition or a plurality of SiGe single epitaxial layers having a plurality of compositions in order to prevent co-doping of impurities.;COPYRIGHT KIPO 2012