SCE nanoheterostructures metamorphic InAlAs / InGaAs

摘要

The invention relates to a semiconductor MNEMT (metamorphic high electron mobility transistor) nanogeterostruktur used to manufacture transistors and microwave monolithic integrated circuits with high operating frequency and high breakdown voltages. Object of the present utility model is to increase the operating frequency of the microwave transistors fabricated on the basis nanogeterostruktur high InAs in the active region, grown on GaAs substrates. The technical result, which allows to execute a task, is to reduce the density of dislocations penetrating into the active region nanoheterostructures. Technical result is achieved due to the fact that in the semiconductor metamorphic nanogeterostruktur consisting of a monocrystalline semi-insulating substrate is GaAs (1) superlattice Al _0.4 Ga _0.6 As / GaAs (2), metamorphic buffer In _x Al _1-x As (3) with a linear increase in the content InAs x thickness (x = x ₁ → x _4, where x ₁ = 0, x ₄ ≥0.75), depletion region In _x Al _1-x As (4) with a smooth or abrupt decrease in the content of InAs x thickness (x = ₄ x ₄ → x ', where x _4' -x ₄ = 0.05 ÷ 0.1), with heal layer of uniform composition In _{x4 'Al1-x4'} As (5), the active region of InAlAs / InGaAs (6) with a high content of InAs (70%) Comp -consistency of the lattice parameter with heals layer inside metamorphic buffer (3) are introduced two mechanically strained superlattice In (x _{2+ Δx) Al 1- (x2 +} Δx) As / In (x2-Δx) Ga 1- (x2-Δx) As and _{in (x3 + Δx) Al 1-} (x3 + Δx) As / in (x3-Δx) Ga 1- (x3-Δx) As, symmetrically on mismatched Δh = 0.05 ÷ 0.10 relative to the current composition of the metamorphic buffer data points that divide the metamorphic buffer into three parts, each of which content InAs x thickness increases, respectively, from x ₁ to x _3, from x ₂ and x ₃ and of x ₃ and x _4, where 0.4 x ₂ 0.6, and 0.6 x ₃ 0.75.