THE METHOD OF PRODUCTION OF THE TOPOLOGICAL IMAGE IN THE CHROME FILM

摘要

FIELD: photolithography.; SUBSTANCE: invention relates to the photolithography and can be applied to microelectronics; the essence of the invention is as follows: the method of production of the topological image in the chrome film includes the following stages: coating of the roentgen amorphous chrome film by means of vacuum dispersion in the vacuum chamber via the electron-optical method or the method of magnetron deposition, formation of the layer of the photoresist, exposure of photoplates, chemical etching, ion-beam processing of the roentgen amorphous chrome film in the vacuum chamber filled in with a gas mixture using the Kauffman source as the ion beam, removal of the remainder of the photoresist mask, chemical etching of the chrome film in the ceric etch with application of sulphuric acid, at that roentgen amorphous chrome film is applied with the range of thickness from 150 nm to 500 nm, the photoresist layer thickness is to be no less 250 nm, the ion-beam processing of the roentgen amorphous chrome film is executed through the photoresist mask within no less than 30 seconds with the help of the mesh Kaufman ion source at the pressure of the gas mixture (4-6)-10^-2 Pa, at that the gas mixture contains argon counting to 70 - 95% of the total mass, khladon 218 (С₃F₈) - 30 - 5 % of the total mass, and residual gases; removal of the remainder of the photoresist mask is executed by a weak 0.5% alkaline solution; the carrier material with the chrome film is flushed by distilled water.; EFFECT: provision of the image of a set topology due to the essential difference of etching rates of crystalline and amorphous extents of chrome in the chemical etch.;8 cl, 2 dwg