Digital magnetic memory cell device for reading and / or writing operations, having a soft-magnetic reading and / or writing layer system and at least one hard-magnetic, AAF system formed reference layer system with at least one reference layer, - wherein the reference layer system (2, 2 ', 2' ', 2 '' 'a, 2' '' b) a layer section comprising at least one bias layer system (7, 7, 7 '' ', 7' '' ') with at least one ferrimagnetic layer (8, 8', 8 '', 8 '' ', 8' '' '), - wherein the magnetic moments of the bias layer system (7, 7', 7 '' ', 7' '' ') and the reference layer (10, 10', 10 '' a) wherein the at least one ferrimagnetic layer is a multilayer system consisting of two separate layers (8 ', 8' '), wherein the one layer (8') of the two separate layers (8 ') is coupled by a coupling layer (9, 9'). 8 ', 9') of a transition metal and the other layer (8 '') of the two separate layers (8 ', 8 '') is formed of a rare earth metal.
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