A Dielectric Tunnel RC Device Model for Magnetic Tunnel Junction in Magnetic Random Access Memory Cell

摘要

The dielectric tunnel resistance-capacitance model of the thin insulating layer in a magnetic tunnel junction for device operation in magnetic random access memory circuit is proposed. The curve-fitting function derived from Simmons' tunneling equations describing the variation of dielectric tunnel resistance and tunnel capacitance before the tunneling, is well characterized. In addition, a characterization technique developed from the mathematical analysis of dielectric tunnel resistance and capacitance with ramp voltage characteristics measured by conductive atomic force microscopy is established.