Digital magnetic memory cell device e.g. for read- and/or write-operations, has magnetic layer arranged remote from anti-ferromagnetic layer

摘要

A digital magnetic memory cell device has a soft-magnetic read- and/or write layer system and at least one hard-magnetic reference layer system and a reference layer system designed as an AAF (artificial anti-ferromagnetic) system comprising an AAF-layer composite, as well as at least one reference layer. The magnetic layer (8) is arranged remote from the anti-ferromagnetic layer (10) and has a uniaxial anisotropy arranged in a first direction and the direction of magnetization of the anti-ferromagnetic layer (10) is arranged in a second direction and are positioned at an angle (alpha) to one another. An Independent claim is given for a method of fabricating a digital memory cell device.