MAGNETO-RESISTANCE EFFECT ELEMENT. THIN FILM MAGNETIC HEAD, HEAD GIMBAL ASSEMBLY, HEAD ARM ASSEMBLY, MAGNETIC DISK APPARATUS, SYNTHETIC ANTI-FERROMAGNETIC MAGNETIZATION FIXING LAYER, MAGNETIC MEMORY CELL, AND CURRENT SENSOR

摘要

PPROBLEM TO BE SOLVED: To provide a magneto-resistance effect element which can cope with high recording density by stably revealing larger resistance variation quantity. PSOLUTION: A MR element 10 is provided with a magnetization fixing film 23 positioned at a reverse side of a magnetization free layer 25 holding a non-magnetic interposition layer 24 between them and having a non-magnetic intermediate layer 232 consisting of RuCu. When a read-out current is made to flow to a lamination direction through a lower part electrode 11 and an upper part electrode 14, reduction of resistance variation quantity caused by a second magnetization fixing layer 233 can be suppressed. Further, in a magnetic field being more wide range, first and second magnetization fixing layers 231, 233 having larger thickness can be anti-ferromagnetic-coupled. Thereby, compatibility of increment of resistance variation quantity and stability of the magnetic field can be attained. Therefore, the element can cope with high recording density by increasing resistance variation quantity as a whole, while reducing influence of external noise and holding stable operation. PCOPYRIGHT: (C)2007,JPO&INPIT