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Ultrathin amorphous carbon films synthesized by filtered cathodic vacuum arc used as protective overcoats of heat-assisted magnetic recording heads

机译:通过过滤阴极真空电弧合成的超薄无定形碳膜用作热辅助磁记录头的保护层

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摘要

Despite numerous investigations of amorphous carbon (a-C) films, a comprehensive study of the feasibility and optimization of sub-5-nm-thick a-C films deposited onto the write pole of heat-assisted magnetic recording (HAMR) heads is lacking. The main objective of this study was to identify the role of pulse substrate bias voltage and C+ ion incidence angle on the structure and thickness of 1–4-nm-thick a-C films deposited by a rather new thin-film deposition method, known as filtered cathodic vacuum arc (FCVA). The cross-sectional structure of a-C films synthesized under various FCVA conditions was examined by high-resolution transmission electron microscopy (HRTEM), scanning transmission electron microscopy (STEM), and electron energy loss spectroscopy (EELS). It was found that film growth under process conditions of low-to-intermediate substrate bias voltage (in the range of −25 to −100  V), low ion incidence angle (10°), very short deposition time (6 s), and fixed other deposition parameters (65% duty cycle of substrate pulse biasing and 1.48 × 1019 ions/m2·s ion flux) yields a-C films of thickness ≤4 nm characterized by a significant content (~50–60 at%) of tetrahedral (sp3) carbon atom hybridization. A threshold where sp3 hybridization is greatly reduced due to limited film growth was determined from the HRTEM/STEM and EELS measurements. The results of this study demonstrate the viability of FCVA to produce extremely thin and uniform protective a-C films with relatively high sp3 contents for HAMR heads.
机译:尽管对无定形碳(a-C)膜进行了大量研究,但缺乏对沉积在热辅助磁记录(HAMR)头的写极上的亚5纳米以下a-C膜的可行性和优化的综合研究。这项研究的主要目的是确定脉冲衬底偏置电压和C + 离子入射角对由较新的薄膜沉积的1-4 nm厚aC膜的结构和厚度的作用。膜沉积法,称为过滤阴极真空电弧(FCVA)。通过高分辨率透射电子显微镜(HRTEM),扫描透射电子显微镜(STEM)和电子能量损失谱(EELS)检查了在各种FCVA条件下合成的a-C膜的截面结构。发现在低至中等的衬底偏置电压(在-25至-100 V的范围内),低离子入射角(10°),非常短的沉积时间(6 s)和固定其他沉积参数(衬底脉冲偏置的65%占空比和1.48 1.×10 19 ions / m 2 ·s离子通量)可产生厚度≤4nm的aC膜四面体(sp 3 )碳原子杂交的显着含量(〜50–60 at%)。根据HRTEM / STEM和EELS测量,确定了由于膜生长受限而使sp 3 杂交大大降低的阈值。这项研究的结果表明,FCVA可以生产出非常薄且均匀的保护性a-C膜,并具有相对较高的HAMR头sp 3 含量。

著录项

  • 期刊名称 Scientific Reports
  • 作者

    J. Matlak; K. Komvopoulos;

  • 作者单位
  • 年(卷),期 -1(8),-1
  • 年度 -1
  • 页码 9647
  • 总页数 11
  • 原文格式 PDF
  • 正文语种
  • 中图分类
  • 关键词

  • 入库时间 2022-08-21 10:57:59

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