Field effect gas sensor i.e. gas-sensitive chemical FET, for use in gas detector for detecting sensitivity and selectivity of gas, has rear electrode made of metal or semiconductor material and bordered at dielectric layer at side

摘要

The sensor (100) has a porous electrode layer (110) permeable to predetermined gas, and a dielectric layer (120) limited at the porous electrode layer. The dielectric layer is provided with a material that differs from silicon dioxide and silicon nitride, and a rear electrode (150) is made of metal or semiconductor material and bordered at the dielectric layer at a side, which lies opposite to the electrode layer. The dielectric layer is manufactured using atomic-layer-deposition-process, where material of the dielectric layer is doped with doping material. Independent claims are also included for the following: (1) a method for detecting gas at a field effect gas sensor (2) a computer program product comprising a set of instructions for performing the method for detecting gas at the field effect gas sensor (3) a method for manufacturing the field effect gas sensor.