首页> 外国专利> Energy filter assembly for ion implantation system used in fabrication of silicon wafer, has filter elements that are arranged in opening of energy filter which is vibrated vertical to propagation direction of ion beam

Energy filter assembly for ion implantation system used in fabrication of silicon wafer, has filter elements that are arranged in opening of energy filter which is vibrated vertical to propagation direction of ion beam

机译:用于硅晶片制造中的离子注入系统的能量过滤器组件,具有布置在垂直于离子束传播方向振动的能量过滤器开口中的过滤器元件

摘要

The filter assembly has an energy filter (2) that includes an opening (3) for allowing passage of ion beam (1). The radiant energy-absorbing filter elements (4-1-4-3) are arranged in the opening. The dimension of the filter elements vertical to the propagation direction of the ion beam is smaller than the dimension of the opening. The energy filter is vibrated vertical to the propagation direction of the ion beam. An independent claim is included for method for manufacturing energy filter assembly.
机译:过滤器组件具有一个能量过滤器(2),该能量过滤器包括一个允许离子束(1)通过的开口(3)。吸收辐射能的过滤元件(4-1-4-3)布置在开口中。垂直于离子束的传播方向的过滤器元件的尺寸小于开口的尺寸。能量过滤器垂直于离子束的传播方向振动。包括用于制造能量过滤器组件的方法的独立权利要求。

著录项

  • 公开/公告号DE102011075350A1

    专利类型

  • 公开/公告日2012-11-08

    原文格式PDF

  • 申请/专利权人 FACHHOCHSCHULE JENA;

    申请/专利号DE20111075350

  • 发明设计人 RUEB MICHAEL DR.;

    申请日2011-05-05

  • 分类号H01J37/317;C23C14/48;H01J37/05;H01J37/147;

  • 国家 DE

  • 入库时间 2022-08-21 17:04:53

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