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Energy filter assembly for ion implantation system used in fabrication of silicon wafer, has filter elements that are arranged in opening of energy filter which is vibrated vertical to propagation direction of ion beam
Energy filter assembly for ion implantation system used in fabrication of silicon wafer, has filter elements that are arranged in opening of energy filter which is vibrated vertical to propagation direction of ion beam
The filter assembly has an energy filter (2) that includes an opening (3) for allowing passage of ion beam (1). The radiant energy-absorbing filter elements (4-1-4-3) are arranged in the opening. The dimension of the filter elements vertical to the propagation direction of the ion beam is smaller than the dimension of the opening. The energy filter is vibrated vertical to the propagation direction of the ion beam. An independent claim is included for method for manufacturing energy filter assembly.
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