REFLECTION-TYPE MASK BLANK FOR EUV LITHOGRAPHY, MANUFACTURING METHOD THEREOF, AND MANUFACTURING METHOD OF SUBSTRATE WITH REFLECTION LAYER FOR MASK BLANK

摘要

PROBLEM TO BE SOLVED: To provide an EUV mask blank or a manufacturing method of a substrate with a reflection layer for EUVL with which it is possible to alleviate deformation of a substrate due to a membrane stress at an Mo/Si multilayer reflection film.SOLUTION: In a manufacturing method of a reflection-type mask blank for EUV lithography (EUVL), a reflection layer that reflects EUV light is formed on a substrate and an absorber layer that absorbs the EUV light is formed on the reflection layer. The reflection layer is an Mo/Si multilayer reflection film. The manufacturing method of a reflection-type mask blank for EUVL includes the steps of: forming the Mo/Si multilayer reflection film in an atmosphere containing inactive gas, which contains at least one of helium (He), argon (Ar), neon (Ne), krypton (Kr), and xenon (Xe), and hydrogen (H) with a sputtering method; and performing, after the absorber layer is formed, heat treatment on the Mo/Si multilayer reflection film at a temperature of 120 to 160°C.