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MATERIAL FOR THIN FILM STRAIN SENSOR AND THIN FILM STRAIN SENSOR USING THE SAME

机译:薄膜应变传感器的材料和使用相同薄膜传感器的材料

摘要

PROBLEM TO BE SOLVED: To provide material for a thin film strain sensor having high strain sensitivity, low lateral sensitivity, and a low resistance temperature coefficient, and to provide a thin film strain sensor using the material.;SOLUTION: The Cr content of material for a thin film strain sensor of the present invention is 14-25 mass%, and the rest is composed of Pd and inevitable impurities. A thin film strain sensor 1 according to the present invention is obtained by forming, on an insulating film (not shown): a sensing part 3 for sensing strain; and lead parts 4 formed at both ends of the sensing part 3. At least the sensing part 3, among the sensing part 3 and the lead parts 4, is formed using the material for a thin film strain sensor.;COPYRIGHT: (C)2014,JPO&INPIT
机译:解决的问题:提供用于薄膜应变传感器的材料,其具有高应变敏感性,低横向灵敏度和低电阻温度系数,并提供使用该材料的薄膜应变传感器。用于本发明的薄膜应变传感器的质量分数为14-25质量%,其余由Pd和不可避免的杂质组成。通过在绝缘膜(未示出)上形成:用于感测应变的感测部3;以及在绝缘膜(未示出)上形成薄膜应变传感器1,来获得本发明的薄膜应变传感器1。感应部3和引线部4中的至少感应部3是由薄膜应变传感器用材料形成的。版权所有:(C) 2014,日本特许厅

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