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THIN FILM STRAIN SENSOR MATERIAL AND THIN FILM STRAIN SENSOR
THIN FILM STRAIN SENSOR MATERIAL AND THIN FILM STRAIN SENSOR
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机译:薄膜应变传感器材料和薄膜应变传感器
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摘要
PROBLEM TO BE SOLVED: To provide a thin film strain sensor material and a thin film strain sensor which have a gauge factor of nearly zero in a vertical arrangement and has a large gauge factor in a parallel arrangement.;SOLUTION: The present invention relates to a thin film strain sensor material expressed by a general formula of Cr100-xMx. A second element M is added in a composition ratio x of 0≤x≤30% by atoms so that the gauge factor will be in the range of 0±0.3 when the thin film of the material is arranged on a higher temperature side of the Neel temperature of the material in a vertical direction to the direction of strain of a measurement target. When the second element M is Ni, the composition ratio x is in the range of 5≤x≤22% by atoms, and when the second element M is Fe, the composition ratio x is in the range of 17≤x≤28% by atoms.;SELECTED DRAWING: Figure 2;COPYRIGHT: (C)2019,JPO&INPIT
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机译:解决的问题:提供一种薄膜应变传感器材料和薄膜应变传感器,其在垂直布置中具有接近零的应变系数,而在平行布置中具有较大的应变系数。解决方案:本发明涉及用Cr 100-x Sub> M x Sub>通式表示的薄膜应变传感器材料。以原子百分比0≤x≤30%的组成比x添加第二元素M,使得当材料的薄膜布置在材料的较高温度侧时,规格系数将在0±0.3的范围内。材料在垂直于测量目标应变方向的尼尔温度。当第二元素M为Ni时,组成比x在5≤x≤22%原子范围内,当第二元素M为Fe时,组成比x在17≤x≤28%范围内。按原子顺序;选定的图纸:图2;版权:(C)2019,JPO&INPIT
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