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Strain sensors and pressure sensors using Cr-N thin films for high-pressure hydrogen gas

机译:使用Cr-N薄膜的应变传感器和压力传感器用于高压氢气

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The authors investigated the influence of hydrogen on Cr-N strain-sensitive thin films, which have a gauge factor of about 14, to develop a high-sensitive strain sensor for high-pressure hydrogen gas. As a result, it was found that the thin film was not affected by hydrogen and the specimen of Cr-N thin film on Zirconia substrate showed a sensitive and linear output to the pressure. It was considered that the Cr-N thin films were able to be expected as not only high-sensitive strain sensors but also diaphragm-less pressure sensors in high-pressure hydrogen gas.
机译:作者研究了氢对Cr-N应变敏感薄膜的影响,该薄膜的应变系数约为14,以开发用于高压氢气的高敏感应变传感器。结果,发现该薄膜不受氢影响,并且氧化锆衬底上的Cr-N薄膜样品对压力显示出灵敏且线性的输出。据认为,Cr-N薄膜不仅可以用作高压氢气中的高灵敏应变传感器,而且还可以用作无隔膜压力传感器。

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