Group III nitride semiconductor production method of the self-supporting substrate, III-nitride semiconductor free-standing substrate, III-nitride semiconductor device manufacturing method, and a group III nitride semiconductor device

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a group III nitride semiconductor free-standing substrate, in which an area of a single crystal plane on the surface of the group III nitride semiconductor free-standing substrate can be enlarged with good reproducibility without performing spherical polishing etc.;SOLUTION: The group III nitride semiconductor free-standing substrate 50 includes an as-grown surface. A region being a half or more of the substrate 50 surface comprises the single crystal plane. The single crystal plane has an off-angle inclined to an m-axis or a-axis direction from a C-plane with group III polarity or to a c-axis or a-axis direction from an M-plane.;COPYRIGHT: (C)2011,JPO&INPIT