Method of fabricating a gallium nitride-based semiconductor electronic devices, the epitaxial substrates, and gallium nitride-based semiconductor electronic devices

摘要

PPROBLEM TO BE SOLVED: To provide an epitaxial substrate including a gallium nitride based semiconductor film capable of providing an excellent surface morphology and an excellent carrier concentration. PSOLUTION: The main surface of a GaN wafer includes an area (b) to an area (e). The area (b) exhibits a hexagonal pyramid-shaped morphology near a position where the off angle is zero. The area (c) exhibits a very flat surface morphology in a range of the off angle of not less than 0.2° and not more than 1.0° in a 1-100 direction and not less than -0.3° and not more than +0.3° in a 1-210 direction. The area (d) exhibits a linear surface morphology the synthetic off angle of which is 1.0° or less in an area sandwiched by the area (b) and the area (c). The area (e) exhibits a dot-shaped surface morphology in an area where the synthetic off angle exceeds 1.0°. PCOPYRIGHT: (C)2010,JPO&INPIT