Production manner of semiconductor structure and the finFET device (stress control of the gate electrode for the performance improvement of FINFET)

摘要

PROBLEM TO BE SOLVED: To provide a FinFET including a gate electrode formed so as to cover a channel region of a semiconductor fin, and to provide a method of manufacturing the same.;SOLUTION: This semiconductor fin has a crystallographic orientation and a piezoresistance coefficient intrinsic to an axial direction. The gate electrode is formed with an intrinsic stress determined to influence, and preferably optimize, charge carrier mobility within the channel region. For this purpose, the intrinsic stress preferably provides induced axial stresses within the gate electrode and semiconductor fin channel region which complement the piezoresistance coefficient intrinsic to the axial direction.;COPYRIGHT: (C)2007,JPO&INPIT