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SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING FINFET DEVICE (GATE ELECTRODE STRESS CONTROL FOR FINFET PERFORMANCE ENHANCEMENT)
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING FINFET DEVICE (GATE ELECTRODE STRESS CONTROL FOR FINFET PERFORMANCE ENHANCEMENT)
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机译:半导体结构和制造FET器件的方法(用于FINFET性能增强的栅极电极应力控制)
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摘要
PROBLEM TO BE SOLVED: To provide a FinFET including a gate electrode formed so as to cover a channel region of a semiconductor fin, and to provide a method of manufacturing the same.;SOLUTION: This semiconductor fin has a crystallographic orientation and a piezoresistance coefficient intrinsic to an axial direction. The gate electrode is formed with an intrinsic stress determined to influence, and preferably optimize, charge carrier mobility within the channel region. For this purpose, the intrinsic stress preferably provides induced axial stresses within the gate electrode and semiconductor fin channel region which complement the piezoresistance coefficient intrinsic to the axial direction.;COPYRIGHT: (C)2007,JPO&INPIT
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