PLASMA ETCHING DEVICE AND PLASMA CLEANING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a plasma etching device capable of suppressing accumulation of etching products containing a noble metal element in a vacuum chamber, and a plasma cleaning method.;SOLUTION: A plasma etching device 10 comprises: a vacuum chamber C in which to house a substrate S; an etching gas supply unit 17a which supplies an etching gas to the vacuum chamber C; a cleaning gas supply unit which supplies a cleaning gas to the vacuum chamber C; and a plasma generation unit which generates a plasma in the vacuum chamber C with the gas in the vacuum chamber C. This etching device etches the substrate S with a plasma of the etching gas and cleans etching products in the vacuum chamber C with a plasma of the cleaning gas. The object to be etched includes at least one of iridium and platinum. The cleaning gas is a mixed gas of a sulfur hexafluoride gas and an oxygen gas.;COPYRIGHT: (C)2013,JPO&INPIT