Surface reforming manner of orientation substrate for epitaxial film formation and orientation substrate for epitaxial film formation

摘要

Orientation degree and smoothness of a substrate surface better than those of conventional ones are provided in a textured substrate for epitaxial thin film growth. The present invention is a textured substrate for epitaxial film formation, including a crystal orientation improving layer made of a metal thin film of 1 to 5000 nm in thickness ON the surface of the textured substrate for epitaxial film formation having a textured metal layer at least ON one surface and wherein differences between orientation degrees ( and ) in the textured metal layer surface and orientation degrees ( and ) in the crystal orientation improving layer surface are both 0.1 to 3.0. Further, when another metal different from the metal constituting this textured substrate crystal orientation improving layer is added equivalent to a thin film which is 30 nm or less, and subsequently is subjected to HEAT treatment and the smoothness of that surface can be improved. At this time and the surface roughness of the substrate surface becomes 20 nm or less.