Study on the structural transformation process from ZnS epitaxial film grown on Si substrate to ZnO epitaxial film by oxidation

摘要

ZnO epitaxial thin film was successfully obtained by oxidation of ZnS epitaxial thin film with the orientation of (0002),[11 (2) over bar0]ZnOparallel to(111),[1(1) over bar 0 ]Si. The ZnS film was completely oxidized at 800 degreesC for 1 h in O-2 flow. An interface layer was formed between the ZnO layer and the Si substrate by excess annealing, The ZnO layer showed near ultraviolet emission due to exciton in addition to visible emission, and by annealing for 5 h, strong exciton emission without the visible emission. [References: 9]