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Three-stage gallium nitride high electron mobility transistor (GaNHEMT) Doherty power amplifier for high frequency
Three-stage gallium nitride high electron mobility transistor (GaNHEMT) Doherty power amplifier for high frequency
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机译:用于高频的三级氮化镓高电子迁移率晶体管(GaNHEMT)Doherty功率放大器
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摘要
A three-stage GaN HEMT Doherty power amplifier for high frequency applications includes: a carrier amplifier; first and second peaking amplifier; a 10-dB power divider configured to divide an input signal to the carrier amplifier and the first and second peaking amplifiers; a first path for controlling input power of the carrier amplifier; and a second path for maintaining an efficiency of 40% or more in an output range of 40 dBm to 50 dBm.
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