word line driver circuit leakage has been reduced

摘要

In order to access the plural memory cells and these memory cells selectively, in order the word line driver circuit in order to use inside the memory array which includes the plural word lines which are connected to the memory cell, to form the word line signal as a function of 1st group of the address signal which is received in the word line driver circuit, the driver which conforms is included. This circuit furthermore, with the plural output nodes which are connected respectively to one of the plural word lines and is connected by the output terminal of the driver and in order to receive the word line signal, the input node which conforms includes the switching circuit which possesses. This switching circuit operates, during memory accessing in order to lead to those where among of the word lines is selected the word line signal as a function of one control signal at least. During the memory access of 1 pair of givens, the output node and the input node of the switching circuit are kept in specified same voltage level, leakage current route inside the switching circuit is gone substantially with that.