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INTEGRATED CIRCUIT WITH FACE-TO-FACE BONDED PASSIVE VARIABLE RESISTANCE MEMORY AND METHOD FOR MAKING THE SAME
INTEGRATED CIRCUIT WITH FACE-TO-FACE BONDED PASSIVE VARIABLE RESISTANCE MEMORY AND METHOD FOR MAKING THE SAME
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机译:具有面对面结合的无源可变电阻存储器的集成电路及其制造方法
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摘要
In one example, an integrated circuit includes two integrated circuit dies that are face-to-face mounted together. The first integrated circuit die includes passive variable resistance memory and the second integrated circuit die includes memory control logic (e.g., CMOS logic circuit). The passive variable resistance memory, also known as resistive non-volatile memory, may be for example memristors, phase-change memory, or magnetoresistive memory. Each memory cell of the passive variable resistance memory on the first integrated circuit die is electrically connected to the memory control logic on the second integrated circuit die through at least one vertical interconnect accesses (vias). For example, the operation (e.g., write/read) of each passive variable resistance memory cell is controlled by the memory control logic. The integrated circuit may also include processor logic on the second integrated circuit die operatively coupled to the memory control logic.
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