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Effective EMC management of large size digital circuits and memories thanks to high capacitance density Integrated Passive Devices (IPDs)

机译:由于高电容密度集成无源设备(IPDS),大尺寸数字电路和记忆的有效EMC管理

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Power bus integrity is a continuing challenge for high performance designs in deep submicron technologies. Leading edge products with hundreds of million transistors, gigahertz clock speeds, supply voltages as low as 500-700 millivolts and supply currents of more than a hundred amps are planned at the 45nm process node [1]. Product architecture, circuit design techniques, and process optimizations can all be used to minimize switching transients however effective supply bypass capacitance is still mandatory since power bus transients ultimately degrade product performance. Most decoupling "bypass" capacitors are usually found in the form of discrete surface mountable (SMT) components with 2 leads which values range from picofarads to tens of microfarads. The most frequent technology for discrete capacitors is that of the socalled Multi-Layer Ceramic Capacitors, or MLCC. Surface Mountable MLCC devices have normalized sizes (Fig.1).
机译:电力总线诚信是深度亚微米技术高性能设计的持续挑战。在45nm过程节点[1]中,计划在45nm过程节点[1]中规划了超过500百万晶体管,千兆赫兹时钟速度,低至500-700毫伏的电源电压和电流超过一百个放大器的电源。产品架构,电路设计技术和工艺优化都可以用于最小化开关瞬变,但是由于电源总线瞬态最终降低产品性能,因此仍然强制有效供电旁路电容。大多数去耦“旁路”电容器通常以离散的表面可安装(SMT)组件的形式发现,其中2个引线,从Picofarad到几十微方的值范围。离散电容器最常用的技术是考虑的多层陶瓷电容器或MLCC的技术。表面可安装的MLCC器件具有归一化尺寸(图1)。

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