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INTEGRATED CIRCUIT WITH VERTICALLY INTEGRATED PASSIVE VARIABLE RESISTANCE MEMORY AND METHOD FOR MAKING THE SAME

机译:具有垂直集成的无源可变电阻存储器的集成电路及其制造方法

摘要

In one example, an integrated circuit includes memory control logic (e.g., CMOS logic circuit) and passive variable resistance memory disposed above the memory control logic. The passive variable resistance memory, also known as resistive non-volatile memory, may be for example memristors, phase-change memory, or magnetoresistive memory. Each memory cell of the passive variable resistance memory is electrically connected to the memory control logic through at least one vertical interconnect accesses (vias). For example, the operation (e.g., write/read) of each passive variable resistance memory cell is controlled by the memory control logic. The integrated circuit may also include processor logic operatively coupled to the memory control logic.
机译:在一个示例中,一种集成电路包括存储器控制逻辑(例如,CMOS逻辑电路)和设置在该存储器控制逻辑上方的无源可变电阻存储器。无源可变电阻存储器,也称为电阻非易失性存储器,可以是例如忆阻器,相变存储器或磁阻存储器。无源可变电阻存储器的每个存储单元通过至少一个垂直互连访问(通孔)电连接到存储器控制逻辑。例如,每个无源可变电阻存储单元的操作(例如,写入/读取)由存储控制逻辑来控制。集成电路还可包括可操作地耦合到存储器控制逻辑的处理器逻辑。

著录项

  • 公开/公告号US2013051117A1

    专利类型

  • 公开/公告日2013-02-28

    原文格式PDF

  • 申请/专利权人 WILLIAM G. EN;DON R. WEISS;

    申请/专利号US201113216610

  • 发明设计人 DON R. WEISS;WILLIAM G. EN;

    申请日2011-08-24

  • 分类号G11C11/21;H01L47/00;G06F17/50;H01L21/20;

  • 国家 US

  • 入库时间 2022-08-21 16:48:10

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