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INTEGRATED CIRCUIT WITH BACKSIDE PASSIVE VARIABLE RESISTANCE MEMORY AND METHOD FOR MAKING THE SAME
INTEGRATED CIRCUIT WITH BACKSIDE PASSIVE VARIABLE RESISTANCE MEMORY AND METHOD FOR MAKING THE SAME
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机译:具有背面无源可变电阻存储器的集成电路及其制造方法
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摘要
In one example, an integrated circuit includes memory control logic (e.g., CMOS logic circuit) on the front side of the integrated circuit die and passive variable resistance memory on the back side of the integrated circuit die. The passive variable resistance memory, also known as resistive non-volatile memory, may be for example memristors, phase-change memory, or magnetoresistive memory. Each memory cell of the passive variable resistance memory on the back side of the integrated circuit die is electrically connected to the memory control logic on the front side of the integrated circuit die through at least one through-die vertical interconnect accesses (vias). For example, the operation (e.g., write/read) of each passive variable resistance memory cell is controlled by the memory control logic. The integrated circuit may also include processor logic on the front side of the integrated circuit die operatively coupled to the memory control logic.
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