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Manufacturing approach for collector and a buried layer of bipolar transistor
Manufacturing approach for collector and a buried layer of bipolar transistor
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机译:双极晶体管的集电极和掩埋层的制造方法
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摘要
This invention disclosed a manufacturing approach of collector and buried layer of a bipolar transistor. One aspect of the invention is that a pseudo buried layer, i.e, collector buried layer, is manufactured by ion implantation and thermal anneal. This pseudo buried layer has a small area, which makes deep trench isolation to divide pseudo buried layer unnecessary in subsequent process. Another aspect is, the doped area, i.e, collector, is formed by ion implantation instead of high cost epitaxy process. This invention simplified the manufacturing process, as a consequence, saved manufacturing cost.
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