Method of rapid thermal treatment using high energy electromagnetic radiation of a semiconductor substrate for formation of epitaxial materials

摘要

A method for fabricating semiconductor devices includes providing a semiconductor substrate having a surface region containing one or more contaminants and having an overlying oxide layer. In an embodiment, the one or more contaminants are at least a carbon species. The method includes processing the surface region using at least a wet processing process to selectively remove the overlying oxide layer and expose the surface region including the one or more contaminants. The method includes subjecting the surface region to a high energy electromagnetic radiation having wavelengths ranging from about 300 to about 800 nanometers for a time period of less than 1 second to increase a temperature of the surface region to greater than 1000 degrees Celsius to remove the one or more contaminants. The method includes removing the high energy electromagnetic radiation to cause a reduction in temperature to about 300 to about 600 degrees Celsius in a time period of less than 1 second.