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Work function adjustment in high-k gate stacks for devices of different threshold voltage
Work function adjustment in high-k gate stacks for devices of different threshold voltage
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机译:高k栅极堆叠中针对不同阈值电压的器件的功函数调整
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摘要
In sophisticated semiconductor devices, different threshold voltage levels for transistors may be set in an early manufacturing stage, i.e., prior to patterning the gate electrode structures, by using multiple diffusion processes and/or gate dielectric materials. In this manner, substantially the same gate layer stacks, i.e., the same electrode materials and the same dielectric cap materials, may be used, thereby providing superior patterning uniformity when applying sophisticated etch strategies.
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