Defect Passivation with Fluorine in a Ta{sub}xC{sub}y/High-K Gate Stack for Enhanced Device Threshold Voltage Stability and Performance

摘要

Using a novel fluorinated Ta{sub}xC{sub}y/High-K gate stack, we show breakthrough device reliability and performance improvements. This is a critical result since threshold voltage instability may be a fundamental problem and performance degradation for High-K is a concern. The novel fluorinated gate stack device exceeds the PBTI and NBTI targets with sufficient margin and has electron mobility comparable to the best polySi/SiON device on bulk Si reported so far.