A compact threshold-voltage model of MOSFETs with stack high-k gate dielectric

摘要

In this paper, a compact threshold-voltage model is developed for stack high-k gate-dielectric MOSFET with a thin interiayer. The simulated results are in good agreement with 2-D simulations. The influences of k value of the interlayer on threshold behaviors are investigated in detail. A low-k interlayer can effectively improve the threshold-voltage behaviors. Furthermore, the ratio of low-k interiayer EOT (equivalent oxide thickness) to high-k layer EOT is optimized by considering both threshold-voltage roll-off and gate leakage current. ©2009 IEEE.