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Blocking dielectric engineered charge trapping memory cell with high speed erase
Blocking dielectric engineered charge trapping memory cell with high speed erase
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机译:通过高速擦除来阻止介电工程电荷陷阱存储单元
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摘要
A band gap engineered, charge trapping memory cell includes a charge trapping element that is separated from a gate by a blocking layer of metal doped silicon oxide material having a medium dielectric constant, such as aluminum doped silicon oxide, and separated from the semiconductor body including the channel by an engineered tunneling dielectric.
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