机译:(HfO_2)_X(Al_2O_3)_(1-X)/ SiO_2双层阻挡氧化物对电荷陷阱存储器件中编程和擦除速度的影响
Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Republic of Korea,R&D Division, SK Hynix Semiconductor Inc., San 136-1 Ami-ri, Bubal-eub, Icheon-si, Gyeonggi-do 467-701, Republic of Korea;
Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Republic of Korea,R&D Division, SK Hynix Semiconductor Inc., San 136-1 Ami-ri, Bubal-eub, Icheon-si, Gyeonggi-do 467-701, Republic of Korea;
Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Republic of Korea;
Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Republic of Korea;
Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Republic of Korea;
机译:具有两种不同的阻挡氧化物Al_2O_3和SiO_2的金属/氧化物/氮化物/氧化物/硅器件中的电荷陷阱分布与存储特性之间的相关性
机译:隧道氧化物工程,用于改善NATVOLATILE电荷捕获记忆中的氧化物工程,用TAN / AL_2O_3 / HFO_2 / SIO_2 / AL_2O_3 / SIO_2 / SI结构
机译:以Al_2O_3为阻挡氧化物的原子层沉积HfO_2薄膜的电荷俘获特性,用于高密度非易失性存储器件应用
机译:具有SiGe埋入沟道的电荷陷阱闪存器件的编程和擦除速度的提高
机译:闪存可擦可编程只读存储设备中的热载流子效应。
机译:以富含Si的SiOX作为电荷陷阱层和铟锡锌氧化物的透明非易失性存储器件的特性
机译:poole-Frenkel效应对电荷陷阱存储器编程和擦除的影响
机译:mOs(金属氧化物半导体)器件中陷阱电荷积累的偏压和氧化层厚度依赖性