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Substrate composed of silicon carbide with thin film, semiconductor device, and method of manufacturing a semiconductor device
Substrate composed of silicon carbide with thin film, semiconductor device, and method of manufacturing a semiconductor device
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机译:由具有薄膜的碳化硅构成的基板,半导体装置以及半导体装置的制造方法
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摘要
A substrate achieving suppressed deterioration of processing accuracy of a semiconductor device due to bending of the substrate, a substrate with a thin film and a semiconductor device formed with the substrate above, and a method of manufacturing the semiconductor device above are obtained. A substrate according to the present invention has a main surface having a diameter of 2 inches or greater, a value for bow at the main surface being not smaller than −40 μm and not greater than −5 μm, and a value for warp at the main surface being not smaller than 5 μm and not greater than 40 μm. Preferably, a value for surface roughness Ra of the main surface of the substrate is not greater than 1 nm and a value for surface roughness Ra of a main surface is not greater than 100 nm.
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