Metal-Oxide-Semiconductor (MOS) Devices composed of Biomimetically synthesized TiO_2 Dielectric Thin Films

摘要

We propose a novel biomimetic method to prepare amorphous TiO_2 thin films on a silicon substrate for metal-oxide-semiconductor field-effect-transistors (MOSFET). The film was formed on a self-assembled monolayer of siloxane. The dielectric permittivity of TiO_2 thinfilms, the dielecric properties of TiO_2/Si interface and the leadage current density were evaluated by measuring the current-voltage characteristics and high-frequency capacitance-voltage characteristics of the MOS device.