DIELECTRIC MONOLAYER THIN FILM, CAPACITOR AND SEMICONDUCTOR DEVICE EACH INCLUDING THE SAME, AND METHOD OF FORMING THE DIELECTRIC MONOLAYER THIN FILM

摘要

Provided are a dielectric monolayer thin film, a capacitor and a semiconductor device each including the dielectric monolayer thin film, and a method of forming the dielectric monolayer thin film, the dielectric monolayer thin film including an oxide which is represented by Formula 1 and has a perovskite-type crystal structure, wherein the oxide has a surface chemically bonded with hydrogen.; A₂B_n−3CnO_3n+1  wherein, in Formula 1, A is a divalent element,B is a monovalent element,C is a pentavalent element, andn is a number from 3 to 8.