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Internal voltage generator circuit and semiconductor memory device using the same

机译:内部电压发生器电路和使用该内部电压发生器电路的半导体存储器件

摘要

An internal voltage generator circuit is disclosed. The internal voltage generator circuit includes a comparator configured to compare a first voltage with a reference voltage and to output a comparison signal. The circuit further includes an internal voltage driver configured to receive an external voltage and the comparison signal and to output an internal voltage at an internal voltage output terminal, based on the comparison signal. The circuit further includes a voltage divider circuit including first and second resistor units and a first voltage output terminal between the first and second resistor units, configured to receive the internal voltage, and configured to output the first voltage based on the resistance values of the first and second resistor units, the first and second resistor units connected in series, and the first voltage being output through the first voltage output terminal. The circuit further includes a control signal generator circuit configured to generate at least one resistor control signal for controlling the resistance value of the first resistor unit and at least one resistor control signal for controlling the resistance value of the second resistor unit, on the basis of the comparison signal and a precharge command.
机译:公开了一种内部电压发生器电路。内部电压发生器电路包括比较器,该比较器被配置为将第一电压与参考电压进行比较并且输出比较信号。该电路还包括内部电压驱动器,该内部电压驱动器被配置为接收外部电压和比较信号并且基于比较信号在内部电压输出端子处输出内部电压。该电路还包括分压器电路,该分压器电路包括第一和第二电阻器单元以及在第一和第二电阻器单元之间的第一电压输出端子,被配置为接收内部电压,并且被配置为基于第一电阻器的电阻值来输出第一电压。第一电阻器和第二电阻器单元串联连接,并且第一电压通过第一电压输出端子输出。该电路还包括控制信号发生器电路,该控制信号发生器电路被配置为基于以下信号生成至少一个用于控制第一电阻器单元的电阻值的电阻器控制信号和至少一个用于控制第二电阻器单元的电阻值的电阻器控制信号。比较信号和预充电命令。

著录项

  • 公开/公告号US8416631B2

    专利类型

  • 公开/公告日2013-04-09

    原文格式PDF

  • 申请/专利权人 YOUNG-HOON KIM;NAM-JONG KIM;

    申请/专利号US20100874299

  • 发明设计人 NAM-JONG KIM;YOUNG-HOON KIM;

    申请日2010-09-02

  • 分类号G11C5/14;

  • 国家 US

  • 入库时间 2022-08-21 16:42:57

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