Internal voltage generator for generating stable internal voltage and a semiconductor memory device with the same and internal voltage generation method of the internal voltage generator

摘要

The present invention comprises a semiconductor memory device and relates to the internal voltage generation method, an internal voltage generator according to the present invention, the oscillator, the cycle controlling part, and a voltage generator comprising the same as an internal voltage generator for generating a stable internal voltage . The oscillator generates an oscillation signal of a pulse form periodically. Period in response to the test signal control unit with the selection signal, and outputs a bypass (bypass) the, or optionally controlled by adjusting the period of the oscillation signal the oscillation signal of the oscillation signal to the output node to the output node. Voltage generator in response to the oscillator signal or the controlled oscillator signal is received via the output node, and generate an internal voltage. Preferably, the period of the oscillation control signal is shorter than the period of the oscillation signal. Preferably, the operating speed of the voltage generator when receiving the controlled oscillator signal is faster than the operating speed of the voltage generator to receive the oscillating signal. The test signal is generated when the test operation of the word lines of a semiconductor memory device. The semiconductor memory device and the internal voltage generation method comprising the same as an internal voltage generator according to the present invention can occur quickly to a stable internal voltage can improve the operating performance of the semiconductor memory device. ; Cycle control unit, an oscillation signal, a frequency divider circuit, the step-up voltage, the back bias voltage