首页> 外国专利> TRANSPARENT CONDUCTIVE FILM AND TRANSPARENT CONDUCTIVE FILM LAMINATED BODY AND PRODUCTION METHOD OF SAME AND SILICON BASED THIN FILM SOLAR CELL

TRANSPARENT CONDUCTIVE FILM AND TRANSPARENT CONDUCTIVE FILM LAMINATED BODY AND PRODUCTION METHOD OF SAME AND SILICON BASED THIN FILM SOLAR CELL

机译:透明导电膜和透明导电膜叠层体以及基于硅和硅的薄膜太阳能电池的生产方法

摘要

A transparent conductive film, useful in producing a highly efficient silicon-based thin film solar cell, superior in hydrogen reduction resistance and superior in optical confinement effect; a transparent conductive film laminated body using the same; a production method therefore ; and a silicon-based thin film solar cell using this transparent conductive film or the transparent conductive film laminated body, as an electrode. It is provided by a transparent conductive film or the like, characterized by containing zinc oxide as a major component and at least one or more kinds of added metal elements selected from aluminum and gallium, whose content being within a range shown by the following expression (1), and having a surface roughness (Ra) of equal to or larger than 35.0 nm, and a surface resistance of equal to or lower than 65Ω/□ -[Al]+0.30[Ga]-2.68x[Al]+1.74 --- (1) (wherein [Al] represents aluminum content expressed as atomicity ratio (%) of Al/(Zn+A1) ; while [Ga] represents gallium content expressed as atomicity ratio (%) of Ga/(2n+Ga)).
机译:一种透明导电膜,可用于生产高效的硅基薄膜太阳能电池,耐氢还原性优异,光学限制效果优异;使用其的透明导电膜层叠体;因此一种生产方法;使用该透明导电膜或透明导电膜层叠体作为电极的硅类薄膜太阳能电池。它由透明导电膜等提供,其特征在于含有氧化锌作为主要成分和选自铝和镓中的至少一种或多种添加的金属元素,其含量在以下表达式所示的范围内( 1),并且具有等于或大于35.0 nm的表面粗糙度(Ra),以及等于或小于65Ω/□-[Al] +0.30 [Ga] <-2.68x [Al] +的表面电阻1.74 ---(1)(其中[Al]表示以Al /(Zn + A1)的原子比(%)表示的铝含量;而[Ga]表示以Ga /(2n的原子比(%)表示的镓含量+ Ga))。

著录项

  • 公开/公告号IN2011CN06536A

    专利类型

  • 公开/公告日2012-11-16

    原文格式PDF

  • 申请/专利权人

    申请/专利号IN6536/CHENP/2011

  • 发明设计人 NAKAYAMA TOKUYUKI;ABE YOSHIYUKI;

    申请日2011-09-12

  • 分类号C23C14/08;

  • 国家 IN

  • 入库时间 2022-08-21 16:41:26

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