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ZnO Films with Very High Haze Value for Use as Front Transparent Conductive Oxide Films in Thin-Film Silicon Solar Cells

机译:具有非常高的雾度值的ZnO薄膜,用作薄膜硅太阳能电池中的正面透明导电氧化物薄膜

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We successfully increased the haze value of zinc oxide (ZnO) films fabricated using metal-organic chemical vapor deposition (MOCVD) by conducting glass-substrate etching before film deposition. It was found that with increasing the glass treatment time, the surface morphology of ZnO films changed from conventional pyramid-like single texture to greater cauliflower-like multi texture. Further, the rms roughness and the haze value of the films increased remarkably. Using ZnO films with a high haze value as front transparent conductive oxide (TCO) films in hydrogenated microcrystalline silicon (μc-Si:H) solar cells, we improved the quantum efficiency of these cells particularly in the long-wavelength region.
机译:通过在膜沉积之前进行玻璃衬底蚀刻,我们成功提高了使用金属有机化学气相沉积(MOCVD)制造的氧化锌(ZnO)膜的雾度值。结果发现,随着玻璃处理时间的增加,ZnO薄膜的表面形貌由传统的金字塔状单一纹理转变为更大的菜花状多重纹理。此外,膜的均方根粗糙度和雾度值显着增加。使用雾度值高的ZnO膜作为氢化微晶硅(μc-Si:H)太阳能电池中的正面透明导电氧化物(TCO)膜,我们改善了这些电池的量子效率,特别是在长波长区域。

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  • 来源
    《Applied physics express》 |2010年第5期|P.051102.1-051102.3|共3页
  • 作者单位

    Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro, Tokyo 152-8552, Japan;

    rnDepartment of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro, Tokyo 152-8552, Japan;

    rnDepartment of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro, Tokyo 152-8552, Japan;

    rnDepartment of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro, Tokyo 152-8552, Japan;

    rnPhotovoltaics Research Center (PVREC), Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro, Tokyo 152-8552, Japan;

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