TRANSPARENT RECTIFYING METAL/METAL OXIDE/SEMICONDUCTOR CONTACT STRUCTURE AND METHOD FOR THE PRODUCTION THEREOF AND USE

摘要

The invention relates to transparent rectifying contact structures forapplication inelectronic devices, in particular appertaining to optoelectronics, solartechnologyand sensor technology, and also a method for the production thereof. Thetransparent rectifying contact structure according to the invention has thefollowingconstituents: a) a transparent semiconductor, b) a transparent, non-insulatingandnon-conducting layer composed of metal oxide, metal sulphide and/or metalnitride,the resistivity of which is preferably in the range of 10 2 .OMEGA.cm to 10 7.OMEGA.cm and c) alayer composed of a transparent electrical conductor wherein the layer b) isformedbetween the semiconductor a) and the layer c) and the composition of the layerb)is defined in greater detail in the description of the patent.