TRANSPARENT RECTIFYING METAL-METAL OXIDE-SEMICONDUCTOR CONTACT STRUCTURE, AND PRODUCTION METHOD AND USE THEREOF

摘要

PROBLEM TO BE SOLVED: To provide transparent rectifying contact structures for use in electronic components, particularly in optoelectronics, solar technology and sensor technology, and a production method thereof.;SOLUTION: The transparent rectifying contact structure has the following constituents: a) a transparent semiconductor, b) a transparent, non-insulating and non-conducting layer composed of metal oxide, metal sulfide and/or metal nitride, the resistivity of which is preferably in the range from 10² Ω cm to 10⁷ Ω cm, and c) a layer composed of a transparent electrical conductor, where the layer b) is formed between the semiconductor a) and the layer c).;COPYRIGHT: (C)2014,JPO&INPIT