TRANSPARENT RECTIFYING METAL/METAL OXIDE/SEMICONDUCTOR CONTACT STRUCTURE AND METHOD FOR THE PRODUCTION THEREOF AND USE

摘要

The present invention relates, in particular, to transparent rectifying contact structures and methods for their manufacture, which are applied to electronic devices in the optoelectronics, solar thermal and sensor arts. The transparent rectifying contact structure according to the present invention has the following structure. a) a transparent semiconductor, b) a transparent non-insulating and non-conductive layer of metal oxides, metal sulfides and / or metal nitrides, wherein the resistivity of the layer is preferably in the range of 10 ² Ωcm to 10 ⁷ Ωcm, and c) transparent A layer of an electrical conductor, wherein the layer b) is formed between the semiconductor a) and the layer c), and the configuration of the layer b) is specifically defined in the detailed description of the present invention.