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300MM POLISHED SILICON WAFER MANUFACTURING PROCESS BY HIGH TEMPERATURE HEAT TREATMENT

机译:高温热处理的300毫米抛光硅晶片制造工艺

摘要

A 300mm silicon wafer manufacturing process by high temperature heat treatment, comprising the process steps of: crystal pulling, slicing angle guiding, double-sided grinding, double-sided polishing, final polishing and high temperature heat treatment. In the manufacturing process of the present invention, the double-sided grinding step is retained, and grinding is directly followed by polishing, eliminating the single-sided grinding step; and the micro-damage on the surface layer not eliminated by the polishing process is removed by the subsequent high temperature heat treatment. The process flow is simple, and can improve both production efficiency and silicon wafer quality.
机译:通过高温热处理的300mm硅片制造工艺,包括以下步骤:拉晶,切角引导,双面研磨,双面抛光,最终抛光和高温热处理。在本发明的制造方法中,保留了双面研磨步骤,并且直接在研磨之后进行抛光,从而省去了单面研磨步骤。并且通过随后的高温热处理去除了未被抛光处理消除的表面层上的微损伤。工艺流程简单,可以提高生产效率和硅晶片质量。

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