首页> 外国专利> 300MM POLISHED SILICON WAFER MANUFACTURING PROCESS BY HIGH TEMPERATURE HEAT TREATMENT

300MM POLISHED SILICON WAFER MANUFACTURING PROCESS BY HIGH TEMPERATURE HEAT TREATMENT

机译:高温热处理的300毫米抛光硅晶片制造工艺

摘要

the present invention the bar to provide a 300mm polished silicon wafer manufacturing process using a high temperature heat treatment, including crystal pulling, slice chamfering, double-sided grinding, double-sided polishing, a final polishing, a high temperature treatment process do. Microscopic damage in the manufacturing process of the present invention are not removed from the hold-sided grinding, and skip the cross-section grinding process by proceeding directly to the polishing after the grinding, and the grinding surface and removed in a subsequent high-temperature heat treatment step, the present process is the process as well as to simple and improving the production efficiency can improve the quality of the silicon wafer. ;
机译:本发明的棒材提供了一种采用高温热处理的300mm抛光硅片的制造工艺,包括拉晶,切片倒角,双面研磨,双面抛光,最终抛光,高温处理等过程。本发明的制造方法中的微观损伤不会从保持面研磨中去除,而是通过在研磨后直接进行研磨而跳过截面研磨工序,并且在随后的高温下被研磨并除去。在热处理步骤中,本工艺不仅是简单的工艺,而且提高生产效率可以提高硅片的质量。 ;

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